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ZXTD6717E6
COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS
SUMMARY NPN: VCEO=15V; VCE(sat)=0.1V; IC= 1.5A; PNP: VCEO=-12V; VCE(sat)=-0.175V; IC= -1.25A;
DESCRIPTION This new combination device comprises a complementary NPN and PNP low saturation transistor housed in the SOT23-6 package. Users benefit from very efficient performance combining a high current operation, exceptionally low VCE(sat) and high HFE resulting in extremely low on state losses. This dual transistor is ideal for use in a variety of efficient driving functions including motors, lamps, relays and solenoids and will also benefit circuits requiring high output current switching. FEATURES * * * * * Low Saturation Voltage RCE(sat) values hFE min 200 at 1A IC=1.5A Continuous (NPN), 1.25A (PNP) SOT23-6 package with PD = 1.1W NPN =135m at 1.5A PNP =150m at 1.25A
SOT23-6
C2
C1
B2
B1
E2
E1
APPLICATIONS * Various driving functions Lamps Motors Relays and solenoids High output current switches
*
ORDERING INFORMATION
Top View
DEVICE ZXTD6717E6TA ZXTD6717E6TC
REEL SIZE (inches) 7 13
TAPE WIDTH (mm) 8mm embossed 8mm embossed
QUANTITY PER REEL 3000 units 10000 units
DEVICE MARKING 6717
ISSUE 2 - JULY 2001 1
ZXTD6717E6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at TA=25C (a) Linear Derating Factor Power Dissipation at TA=25C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC IB PD LIMIT NPN 15 15 5 5 1.5 200 1.1 8.8 1.7 13.6 -55 to +150 LIMIT PNP -12 -12 -5 -3 -1.25 -200 1.1 8.8 1.7 13.6 -55 to +150 UNIT V V V A A mA W mW/C W mW/C C
PD
T j :T stg
THERMAL RESISTANCE
PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL R JA R JA VALUE 125 45 UNIT C/W C/W
NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 5 secs.
ISSUE 2 - JULY 2001 2
ZXTD6717E6
NPN TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO I EBO I CES V CE(sat) 16.5 40 75 150 205 0.93 0.865 200 300 250 200 75 30 420 450 390 300 150 75 180 15 50 250 MHz pF ns ns MIN. 15 15 5 10 10 10 20 55 100 200 245 1.1 1.1 TYP. MAX. UNIT V V V nA nA nA mV mV mV mV mV V V CONDITIONS. I C =100 A I C =10mA* I E =100 A V CB =10V V EB =4V V CES =10V I C =100mA, I B =10mA* I C =250mA, I B =10mA* I C =500mA, I B =10mA* I C =1A, I B =10mA* I C =1.5A, I B =20mA* I C =1.5A, I B =20mA* I C =1.5A, V CE =2V* I C =10mA, V CE =2V* I C =100mA, V CE =2V* I C =500mA, V CE =2V* I C =1A, V CE =2V* I C =3A, V CE =2V* I C =5A, V CE =2V* I C =50mA, V CE =10V f=100MHz V CB =10V, f=1MHz I C =1A, V CC =10V I B1 =I B2 =100mA
Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio
V BE(sat) V BE(on) h FE
Transition Frequency Output Capacitance Turn-On Time Turn-Off Time
fT C obo t (on) t (off)
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%
ISSUE 2 - JULY 2001 3
ZXTD6717E6
PNP TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO I EBO I CES V CE(sat) -25 -55 -110 -160 -185 -0.99 -0.85 300 300 200 125 75 30 490 450 340 250 140 80 220 15 50 135 MHz pF ns ns MIN. -12 -12 -5 -10 -10 -10 -40 -100 -175 -215 -240 -1.10 -1.0 TYP. MAX. UNIT V V V nA nA nA mV mV mV mV mV V V CONDITIONS. I C =-100 A I C =-10mA* I E =-100 A V CB =-10V V EB =-4V V CES =-10V I C =-100mA, I B =-10mA* I C =-250mA, I B =-10mA* I C =-500mA, I B =-10mA* I C =-1A, I B =-50mA* I C =-1.25A, I B =-100mA* I C =-1.25A, I B =-100mA* I C =-1.25A, V CE =-2V* I C =-10mA, V CE =-2V* I C =-100mA, V CE =-2V* I C =-500mA, V CE =-2V* I C =-1.25A, V CE =-2V* I C =-2A, V CE =-2V* I C =-3A, V CE =-2V* I C =-50mA, V CE =-10V f=100MHz V CB =-10V, f=1MHz I C =-1A, V CC =-10V I B1 =I B2 =-100mA
Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio
V BE(sat) V BE(on) h FE
Transition Frequency Output Capacitance Turn-On Time Turn-Off Time
fT C obo t (on) t (off)
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%
ISSUE 2 - JULY 2001 4
ZXTD6717E6
NPN TYPICAL CHARACTERISTICS
0.4
+ 25C
0.4
IC/IB = 50
0.3
0.3
VCE(sat) - (V)
VCE(sat) - (V)
IC/IB=10 IC/IB=50 IC/IB=100
0.2
0.2
-55C + 25C + 100C + 150C
0.1
0.1
0
1m
10m
100m
1
10
0
1m
10m
100m
1
10
IC - Collector Current (A)
IC - Collector Current (A)
VCE(sat) v IC
VCE(sat) v IC
800
V CE = 2V
IC/IB = 50
1.0
hFE - Typical Gain
600
VBE(sat) - (V)
+ 100C
0.75
400
+ 25C
0.5
200
-55C
0.25
-55C + 25C + 100C + 150C
0 1m 10m 100m 1 10
0
1m
10m
100m
1
10
IC - Collector Current (A)
IC - Collector Current (A)
hFE v IC
VBE(sat) v IC
1.0 0.8
10
IC - Collector Current (A)
VBE(on) - (V)
1
DC 1s 100ms 10ms 1ms 100us
0.6 0.4 0.2 0 1m 10m 100m 1 10
-55C + 25C + 100C + 150C
100m
10m 100m
1
10
100
IC - Collector Current (A)
VCE - Collector Emitter Voltage (V)
VBE(on) v IC
Safe Operating Area
ISSUE 2 - JULY 2001 5
ZXTD6717E6
PNP TYPICAL CHARACTERISTICS
0.4
+ 25C
0.4
IC/IB = 50
0.3
0.3
VCE(sat) - (V)
VCE(sat) - (V)
IC/IB=10 IC/IB=50 IC/IB=100
0.2
0.2
-55C + 25C + 100C + 150C
0.1
0.1
0
1m
10m
100m
1
10
0
1m
10m
100m
1
10
IC - Collector Current (A)
IC - Collector Current (A)
VCE(sat) v IC
VCE(sat) v IC
800
V CE = 2V
1.0 0.8
IC/IB = 50
hFE - Typical Gain
600
+ 100C
VBE(sat) - (V)
0.6 0.4 0.2
-55C + 25C + 100C + 150C
400
+ 25C
200
-55C
0 1m 10m 100m 1 10
0
1m
10m
100m
1
10
IC - Collector Current (A)
IC - Collector Current (A)
hFE v IC
VBE(sat) v IC
1.0 0.8
10
IC - Collector Current (A)
VBE(on) - (V)
1
DC 1s 100ms 10ms 1ms 100s
0.6 0.4 0.2 0
-55C + 25C + 100C + 150C
100m
1m
10m
100m
1
10
10m 100m
1
10
100
IC - Collector Current (A)
VCE - Collector Emitter Voltage (V)
VBE(on) v IC
Safe Operating Area
ISSUE 2 - JULY 2001 6
ZXTD6717E6
PACKAGE DIMENSIONS PAD LAYOUT DETAILS
b
e L2
E
E1
e1 D
a
DATUM A
C
A
A2
A1
DIM Millimetres Min A A1 A2 b C D E E1 L e e1 L 0.90 0.00 0.90 0.35 0.09 2.80 2.60 1.50 0.10 0.95 REF 1.90 REF
0
Inches Min 0.35 0 0.035 0.014 0.0035 0.110 0.102 0.059 0.004 0.037 REF 0.074 REF Max 0.057 0.006 0.051 0.019 0.008 0.118 0.118 0.069 0.002
Max 1.45 0.15 1.30 0.50 0.20 3.00 3.00 1.75 0.60
10
0
10
Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 47 Mall Drive, Unit 4 Commack NY 11725 USA Telephone: (631) 543-7100 Fax: (631) 864-7630 Zetex (Asia) Ltd. 3701-04 Metroplaza, Tower 1 Hing Fong Road, Kwai Fong, Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide (c) Zetex plc 2001 www.zetex.com
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
ISSUE 2 - JULY 2001 7

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